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inchange semiconductor product specification silicon npn power transistors BU608 description ? with to-3 package ? high voltage ? wide area of safe operation applications ? for tv horizontal deflection output applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 400 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 7 v i c collector current 7 a t a =25 ?? 2.5 p c collector power dissipation t c =25 ?? 100 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.75 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BU608 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ; i b =0 200 v v (br)cbo collector-base breakdown voltage i c =1ma; i e =0 400 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 7 v v cesat collector-emitter saturation voltage i c =6a ;i b =1.2a 1.0 v v besat base-emitter saturation voltage i c =6a ;i b =1.2a 1.5 v i cbo collector cut-off current v cb =400v; i e =0 10 | a i ebo emitter cut-off current v eb =5v; i c =0 10 | a h fe-1 dc current gain i c =1a ; v ce =5v 15 h fe-2 dc current gain i c =7a ; v ce =5v 5
inchange semiconductor product specification 3 silicon npn power transistors BU608 package outline fig.2 outline dimensions

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